1998. 10. 31 1/2 semiconductor technical data KTB631K epitaxial planar pnp transistor revision no : 1 low frequency power amp, medium speed switching applications features high breakdown voltage v ceo 120v, high current 1a. low saturation voltage and good linearity of h fe . maximum rating (ta=25 1 ) to-126 h j millimeters c e f g d a b dim a c e f g h j k m o p n l d 1. emitter 2. collector 3. base k l m n o p 8.3 max 5.8 0.7 3.1 0.1 3.5 11.0 0.3 2.9 max 1.0 max 1.9 max 0.75 0.15 14.0 min 2.3 0.1 0.75 0.15 1.6 3.4 max b 1 23 + _ + _ + _ + _ + _ electrical characteristics (ta=25 1 ) note : h fe (1) classification y:100 200, gr:160 320 characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -120 v emitter-base voltage v ebo -5 v collector current i c -1 a i cp -2 collector power dissipation ta=25 1 p c 1.5 w tc=25 1 8 junction temperature t j 150 1 storage temperature range t stg -55 150 1 characteristic symbol test condition min. typ. max. unit collector cut of current i cbo v cb =-50v, i e =0 - - -1 a emitter cut of current i ebo v eb =-4v, i c =0 - - -1 a collector-base breakdown voltage v (br)cbo i c =-10 a -120 - - v collector-emitter breakdown voltage v (br)ceo i c =-1ma -120 - - v emitter-base breakdown voltage v (br)ebo i e =-10 a -5 - - v dc current gain h fe (1) note v ce =-5v, i c =-50ma 100 - 320 h fe (2) v ce =-5v, i c =-500ma 20 - - gain bandwidth product f t v ce =-10v, i c =-50ma - 110 - mhz output capacitance c ob v cb =-10v, f=1mhz - 30 - pf collector-emitter saturation voltage v ce(sat) i c =-500ma, i b =-50ma - -0.15 -0.4 v base-emitter saturation voltage v be(sat) i c =-500ma, i b =-50ma - -0.85 -1.2 v switching time turn-on time t on i b1 b2 i 20 sec 1uf 1uf 24 ? 1 ? 100 ? ce v =-12v 2v -12v i =10i =-10i =50ma cb1 b2 - 80 - ns turn-off time t off - 100 - storage time t stg - 600 -
1998. 10. 31 2/2 KTB631K revision no : 1 c collector current i (a) 0 0 base-emitter voltage v (v) be c be v - i v - i ce collector-emitter voltage v (v) 0 c 0 collector current i (a) collector current i (ma) collector emitter saturation -1 -3 -10 -30 ce(sat) -0.01 v - i c ce c -1 -2 -3 -4 -5 -6 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 tc=25 c -20 -15 -12 -10 -8 -6 -4 -2 i =0ma b -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 v =-5v ce ce collector-base voltage v (v) output capacitance c (pf) 5 5 -3 -1 ob c - v ob cb -10 -30 -100 10 30 50 100 200 f=1mhz c collector current i (ma) dc current gain h -3 -1 -30 -10 fe 10 h - i fe c -100 -300 -1k -5k 30 50 100 300 500 v =-5v ce ce(sat) c voltage v (v) -100 -300 -1k -3k -0.03 -0.05 -0.1 -0.3 -0.5 -1.0 i /i =10 c b collector current i (a) 0.005 c 10 1 collector-emitter voltage v (v) ce a s o collector dissipation p (w) c 0 ambient temperature ta ( c) 0 pc - ta 20 40 60 80 100 120 140 160 2 4 6 8 10 infinite heat s ink no heat sink 100 0.01 0.03 0.1 0.3 0.5 1 3 5 0.05 10ms 1ms 100 s dc
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